POLYSILICON LPCVD WITH DISILANE (Si₂H₆)

Disilane (Si₂H₆) offers several advantages over SiH₄ for the polysilicon and amorphous Si LPCVD processes: higher deposition rates at low temperatures and better uniformity and smoothness. By growing at lower temperatures there are fewer nucleation sites, so the grains are larger. This results in fewer grain boundary traps, lower resistivity, and higher carrier mobility.

LPCVD Processes

• Silicon Carbide Devices
• Silicon Nitride Resonators
• Doped Silicon by LPCVD
• POLYSILICON LPCVD WITH SILANE (SiH₄)
• POLYSILICON LPCVD WITH DISILANE (Si₂H₆)
• LTO, DOPED LTO, BPSG, BSG, AND PSG LPCVD
• HTO LPCVD
• TEOS LPCVD
• Silicon Nitride LPCVD
• Low-Stress Silicon Nitride LPCVD
• Stochiometric Silicon Nitride LPCVD
• Silicon Oxynitride (SiN_xO_y) LPCVD
• Silicon Germanium (Si-Ge) LPCVD
• SIPOS (Semi-Insulating Polycrystalline Silicon)
• Polycrystalline Silicon Carbide
• Epitaxial Silicon
• Nano Materials LPCVD